Impact of Nitridation on Bias Temperature Instability and Hard Breakdown Characteristics of SiON MOSFETs
We study how nitridation, applied to SiON gate layers, impacts the reliability of planar metal-oxide-semiconductor field effect transistors (MOSFETs) subjected to negative and positive bias balance bikes temperature instability (N/PBTI) as well as hard breakdown (HBD) characteristics of these devices.Experimental data demonstrate that p-channel tra